View TPS22976NDPUR_9084263.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

an important notice at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. production data. tps22976 slvsde7 ? november 2016 tps22976 5.7-v, 6-a, 14-m on-resistance dual-channel load switch 1 1 features 1 ? integrated dual-channel load switch ? input voltage range: 0.6 v to v bias ? v bias voltage range: 2.5 v to 5.7 v ? on-resistance ? r on = 14 m ? (typical) at v in = 0.6 v to 5 v, v bias = 5 v ? r on = 18 m ? (typical) at v in = 0.6 v to 2.5 v, v bias = 2.5 v ? 6-a maximum continuous switch current per channel ? quiescent current ? 37 a (typical, both channels) at v in = v bias = 5 v ? 35 a (typical, single channel) at v in = v bias = 5 v ? control input threshold enables use of 1.2-, 1.8-, 2.5-, and 3.3-v logic ? configurable rise time ? thermal shutdown ? quick output discharge (qod) (optional) ? son 14-pin package with thermal pad ? esd performance tested per jesd 22 ? 2-kv hbm and 1-kv cdm 2 applications ? ultrabook ? ? notebooks and netbooks ? tablet pcs ? set-top boxes and residential gateways ? telecom systems ? solid-state drives (ssd) 3 description the tps22976 product family consists of two devices: tps22976 and tps22976n. each device is a dual-channel load switch with controlled turnon. the device contains two n-channel mosfets that can operate over an input voltage range of 0.6 v to 5.7 v, and can support a maximum continuous current of 6 a per channel. each switch is independently controlled by an on and off input (on1 and on2), which can interface directly with low-voltage control signals. the tps22976 is capable of thermal shutdown when the junction temperature is above the threshold, turning the switch off. the switch turns on again when the junction temperature stabilizes to a safe range. the tps22976 also offers an optional integrated 230- on-chip load resistor for quick output discharge when the switch is turned off. the tps22976 is available in a small, space-saving 3-mm 2-mm 14-son package (dpu) with integrated thermal pad allowing for high power dissipation. the device is characterized for operation over the free-air temperature range of ? 40 c to 105 c. device information (1) part number package body size (nom) tps22976 tps22976n wson (14) 3.00 mm 2.00 mm (1) for all available packages, see the orderable addendum at the end of the data sheet. application circuit dual power supply or dual dc-dc converter off on tps22976 gnd on1 ct1 off on on2 gnd ct2 vbias c in c l r l vin2 vin1 vout1 vout2 c in gnd c l r l copyright ? 2016, texas instruments incorporated productfolder sample &buy technical documents tools & software support &community
2 tps22976 slvsde7 ? november 2016 www.ti.com product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated table of contents 1 features .................................................................. 1 2 applications ........................................................... 1 3 description ............................................................. 1 4 revision history ..................................................... 2 5 device comparison table ..................................... 3 6 pin configuration and functions ......................... 3 7 specifications ......................................................... 4 7.1 absolute maximum ratings ...................................... 4 7.2 esd ratings .............................................................. 4 7.3 recommended operating conditions ....................... 4 7.4 thermal information .................................................. 4 7.5 electrical characteristics ? v bias = 5 v ................... 5 7.6 electrical characteristics ? v bias = 2.5 v ................ 6 7.7 switching characteristics .......................................... 7 7.8 typical dc characteristics ........................................ 8 7.9 typical ac characteristics ...................................... 11 8 parameter measurement information ................ 14 9 detailed description ............................................ 15 9.1 overview ................................................................. 15 9.2 functional block diagram ....................................... 16 9.3 feature description ................................................. 16 9.4 device functional modes ........................................ 17 10 application and implementation ........................ 18 10.1 application information .......................................... 18 10.2 typical application ................................................ 20 11 power supply recommendations ..................... 23 12 layout ................................................................... 23 12.1 layout guidelines ................................................. 23 12.2 layout example .................................................... 23 12.3 power dissipation ................................................. 23 13 device and documentation support ................. 24 13.1 documentation support ........................................ 24 13.2 receiving notification of documentation updates 24 13.3 community resources .......................................... 24 13.4 trademarks ........................................................... 24 13.5 electrostatic discharge caution ............................ 24 13.6 glossary ................................................................ 24 14 mechanical, packaging, and orderable information ........................................................... 24 4 revision history date revison note november 2016 * initial release
3 tps22976 www.ti.com slvsde7 ? november 2016 product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated 5 device comparison table device r on at v in = v bias = 5 v (typical) quick output discharge maximum output current enable tps22976 14 m yes 6 a active high tps22976n 14 m no 6 a active high 6 pin configuration and functions dpu package 14-pin wson with exposed thermal pad top view dpu package 14-pin wson with exposed thermal pad bottom view pin functions pin i/o description no. name 1 vin1 i switch 1 input. recommended voltage range for these pins for optimal r on performance is 0.6 v to v bias . place an optional decoupling capacitor between these pins and gnd to reduce v in1 dip during turnon of the channel. see the application information section for more information 2 3 on1 i active-high switch 1 control input. do not leave floating 4 vbias i bias voltage. power supply to the device. recommended voltage range for this pin is 2.5 v to 5.7 v. see the application information section 5 on2 i active-high switch 2 control input. do not leave floating 6 vin2 i switch 2 input. recommended voltage range for these pins for optimal r on performance is 0.6 v to v bias . place an optional decoupling capacitor between these pins and gnd to reduce v in2 dip during turnon of the channel. see the application information section for more information 7 8 vout2 o switch 2 output 9 10 ct2 o switch 2 slew rate control. can be left floating. capacitor used on this pin must be rated for a minimum of 25 v for desired rise time performance 11 gnd ? ground 12 ct1 o switch 1 slew rate control. can be left floating. capacitor used on this pin must be rated for a minimum of 25 v for desired rise time performance 13 vout1 o switch 1 output 14 ? thermal pad ? thermal pad (exposed center pad) to alleviate thermal stress. tie to gnd. see the layout section for layout guidelines 14 1 vout2 vout1 gnd ct1 ct2 vout2 vout1 vin1 vin1 vbias vin2 vin2 on1 on2 1 vin1 vin1 on1 vbias vin2 vin2 on2 vout2 vout1 ct1 gnd ct2 vout2 vout1 23 4 5 6 14 13 12 10 9 thermal pad 67 8 11
4 tps22976 slvsde7 ? november 2016 www.ti.com product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated (1) stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions . exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) all voltage values are with respect to network ground terminal. 7 specifications 7.1 absolute maximum ratings over operating free-air temperature range (unless otherwise noted) (1) min max unit (2) v in1,2 input voltage ? 0.3 6 v v out1,2 output voltage ? 0.3 6 v v on1,2 on-pin voltage ? 0.3 6 v v bias bias voltage ? 0.3 6 v i max maximum continuous switch current per channel 6 a i pls maximum pulsed switch current per channel, pulse < 300 s, 3% duty cycle 8 a t j maximum junction temperature 125 c t stg storage temperature ? 65 150 c (1) jedec document jep155 states that 500-v hbm allows safe manufacturing with a standard esd control process. (2) jedec document jep157 states that 250-v cdm allows safe manufacturing with a standard esd control process. 7.2 esd ratings value unit v (esd) electrostatic discharge human body model (hbm), per ansi/esda/jedec js-001 (1) 2000 v charged-device model (cdm), per jedec specification jesd22- c101 (2) 1000 (1) see the input capacitor (optional) section. (2) in applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. maximum ambient temperature [t a(max) ] is dependent on the maximum operating junction temperature [t j(max) ], the maximum power dissipation of the device in the application [p d(max) ], and the junction-to-ambient thermal resistance of the part/package in the application ( ja ), as given by the following equation: ta (max) = t j(max) ? ( ja p d(max) ) 7.3 recommended operating conditions min max unit v in1,2 input voltage 0.6 v bias v v bias bias voltage 2.5 5.7 v v on1,2 on voltage 0 5.7 v v out1,2 output voltage v in v v ih high-level input voltage, on v bias = 2.5 v to 5.7 v 1.2 5.7 v v il low-level input voltage, on v bias = 2.5 v to 5.7 v 0 0.5 v c in1,2 input capacitor 1 (1) f t a operating free-air temperature (2) ? 40 105 c (1) for more information about traditional and new thermal metrics, see the semiconductor and ic package thermal metrics application report. 7.4 thermal information thermal metric (1) tps22976 unit dpu (wson) 14 pins r ja junction-to-ambient thermal resistance 50.8 c/w r jc(top) junction-to-case (top) thermal resistance 52.3 c/w r jb junction-to-board thermal resistance 18.4 c/w jt junction-to-top characterization parameter 1.6 c/w jb junction-to-board characterization parameter 18.6 c/w
5 tps22976 www.ti.com slvsde7 ? november 2016 product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated thermal information (continued) thermal metric (1) tps22976 unit dpu (wson) 14 pins r jc(bot) junction-to-case (bottom) thermal resistance 6.5 c/w (1) not present in tps22976n 7.5 electrical characteristics ? v bias = 5 v unless otherwise noted, the specifications in the following table applies where v bias = 5 v. typical values are for t a = 25 c parameter test conditions t a min typ max unit power supplies and currents i q,vbias v bias quiescent current (both channels) i out1 = i out2 = 0 ma, v in1,2 = v on1,2 = 5 v ? 40 c to +85 c 37 48 a ? 40 c to +105 c 49 v bias quiescent current (single channel) i out1 = i out2 = 0 ma, v on2 = 0 v v in1,2 = v on1 = 5 v ? 40 c to +85 c 35 43 a ? 40 c to +105 c 44 i sd,vbias v bias shutdown current v on1,2 = 0 v, v vout1,2 = 0 v ? 40 c to +105 c 1.37 2.3 a i sd,vin v in shutdown current (per channel) v on = 0 v, v out = 0 v v in = 5 v ? 40 c to +85 c .005 5.5 a ? 40 c to +105 c 11.3 v in = 3.3 v ? 40 c to +85 c .002 1.4 ? 40 c to +105 c 3.4 v in = 1.8 v ? 40 c to +85 c .002 0.5 ? 40 c to +105 c 1.4 v in = 0.6 v ? 40 c to +85 c .001 0.3 ? 40 c to +105 c 0.8 i on on-pin input leakage current v on = 5.5 v ? 40 c to +105 c 0.1 a resistance characteristics r on on-state resistance (per channel) i out = ? 200 ma v in = 5 v 25 c 14 18 m ? ? 40 c to +85 c 22 ? 40 c to +105 c 23 v in = 3.3 v 25 c 14 18 ? 40 c to +85 c 22 ? 40 c to +105 c 23 v in = 1.8 v 25 c 14 18 ? 40 c to +85 c 22 ? 40 c to +105 c 23 v in = 1.2 v 25 c 14 18 ? 40 c to +85 c 22 ? 40 c to +105 c 23 v in = 1.05 v 25 c 14 18 ? 40 c to +85 c 22 ? 40 c to +105 c 23 v in = 0.6 v 25 c 14 18 ? 40 c to +85 c 22 ? 40 c to +105 c 23 v on,hys on-pin hysteresis v in = 5 v 25 c 90 mv r pd (1) output pulldown resistance v in = v out = 5 v, v on = 0 v ? 40 c to +105 c 230 280 ? t sd thermal shutdown junction temperature rising ? 160 o c t sd,hys thermal-shutdown hysteresis junction temperature falling ? 20 o c
6 tps22976 slvsde7 ? november 2016 www.ti.com product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated (1) not present in tps22976n 7.6 electrical characteristics ? v bias = 2.5 v unless otherwise noted, the specifications in the following table applies where v vbias = 2.5 v. typical values are for t a = 25 c parameter test conditions t a min typ max unit power supplies and currents i q,vbias v bias quiescent current (both channels) i out1 = i out2 = 0 ma, v in1,2 = v on1,2 = 2.5 v ? 40 c to +85 c 15 20 a ? 40 c to +105 c 20 v bias quiescent current (single channel) i out1 = i out2 = 0 ma, v on2 = 0 v v in1,2 = v on1 = 2.5 v ? 40 c to +85 c 14 19 a ? 40 c to +105 c 19 i sd,vbias v bias shutdown current v on1,2 = 0 v, v vout1,2 = 0 v ? 40 c to +105 c .58 1.1 a i sd,vin v in shutdown current (per channel) v on = 0 v, v out = 0 v v in = 2.5 v ? 40 c to +85 c .005 0.8 a ? 40 c to +105 c 2.1 v in = 1.8 v ? 40 c to +85 c .002 0.5 ? 40 c to +105 c 1.4 v in = 1.05 v ? 40 c to +85 c .002 0.3 ? 40 c to +105 c 1 v in = 0.6 v ? 40 c to +85 c .001 0.3 ? 40 c to +105 c 0.8 i on on-pin input leakage current v on = 5.5 v ? 40 c to +105 c 0.1 a resistance characteristics r on on-state resistance (per channel) i out = ? 200 ma v in = 2.5 v 25 c 18 23 m ? ? 40 c to +85 c 28 ? 40 c to +105 c 30 v in = 1.8 v 25 c 16 23 ? 40 c to +85 c 28 ? 40 c to +105 c 29 v in = 1.5 v 25 c 16 22 ? 40 c to +85 c 27 ? 40 c to +105 c 28 v in = 1.2 v 25 c 16 21 ? 40 c to +85 c 26 ? 40 c to +105 c 28 v in = 1.05 v 25 c 16 21 ? 40 c to +85 c 25 ? 40 c to +105 c 27 v in = 0.6 v 25 c 15 20 ? 40 c to +85 c 25 ? 40 c to +105 c 26 v on,hys on-pin hysteresis v in = 2.5 v 25 c 70 mv r pd (1) output pulldown resistance v in = v out = 2.5 v, v on = 0 v ? 40 c to +105 c 250 330 ? t sd thermal shutdown junction temperature rising ? 160 o c t sd,hys thermal-shutdown hysteresis junction temperature falling ? 20 o c
7 tps22976 www.ti.com slvsde7 ? november 2016 product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated 7.7 switching characteristics parameter test condition min typ max unit v in = v on = v bias = 5 v, t a = 25 o c (unless otherwise noted) t on turnon time r l = 10 , c l = 0.1 f, c t = 1000 pf 1490 s t off turnoff time r l = 10 , c l = 0.1 f, c t = 1000 pf 3 t r v out rise time r l = 10 , c l = 0.1 f, c t = 1000 pf 1770 t f v out fall time r l = 10 , c l = 0.1 f, c t = 1000 pf 2 t d on delay time r l = 10 , c l = 0.1 f, c t = 1000 pf 620 v in = 0.6 v, v on = v bias = 5 v, t a = 25 o c (unless otherwise noted) t on turnon time r l = 10 , c l = 0.1 f, c t = 1000 pf 620 s t off turnoff time r l = 10 , c l = 0.1 f, c t = 1000 pf 3 t r v out rise time r l = 10 , c l = 0.1 f, c t = 1000 pf 285 t f v out fall time r l = 10 , c l = 0.1 f, c t = 1000 pf 2 t d on delay time r l = 10 , c l = 0.1 f, c t = 1000 pf 460 v in = 2.5 v, v on = 5 v, v bias = 2.5 v, t a = 25 o c (unless otherwise noted) t on turnon time r l = 10 , c l = 0.1 f, c t = 1000 pf 2350 s t off turnoff time r l = 10 , c l = 0.1 f, c t = 1000 pf 4 t r v out rise time r l = 10 , c l = 0.1 f, c t = 1000 pf 2275 t f v out fall time r l = 10 , c l = 0.1 f, c t = 1000 pf 2 t d on delay time r l = 10 , c l = 0.1 f, c t = 1000 pf 1210 v in = 0.6 v, v on = 5 v, v bias = 2.5 v, t a = 25 o c (unless otherwise noted) t on turnon time r l = 10 , c l = 0.1 f, c t = 1000 pf 1410 s t off turnoff time r l = 10 , c l = 0.1 f, c t = 1000 pf 5 t r v out rise time r l = 10 , c l = 0.1 f, c t = 1000 pf 700 t f v out fall time r l = 10 , c l = 0.1 f, c t = 1000 pf 2 t d on delay time r l = 10 , c l = 0.1 f, c t = 1000 pf 1030
8 tps22976 slvsde7 ? november 2016 www.ti.com product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated 7.8 typical dc characteristics v in1 = v in2 = v bias v on1 = v on2 = 5 v v out = open figure 1. v bias quiescent current vs bias voltage both channels v in1 = v bias v on1 = 5 v v out = open figure 2. v bias quiescent current vs bias voltage single channel v in1 = v in2 = v bias v on1 = v on2 = 0 v v out = 0 v figure 3. v bias shutdown current vs bias voltage both channels v bias = 5 v v on = 0 v v out = 0 v note: ? 40 c and 25 c curves have similar values, therefore only one line is visible. figure 4. off-state v in current vs input voltage single channel v bias = 2.5 v i out = ? 200 ma v on = 5 v figure 5. on-resistance vs ambient temperature single channel v bias = 5 v i out = ? 200 ma v on = 5 v note: all r on curves have similar values, therefore only one line is visible. figure 6. on-resistance vs ambient temperature single channel bias voltage (v) shutdown current ( p a) 2.5 3 3.5 4 4.5 5 5.5 0 0.5 1 1.5 2 2.5 d003 -40 q c 25 q c 85 q c 105 q c input voltage (v) shutdown current ( p a) 0.6 1.1 1.6 2.1 2.6 3.1 3.6 4.1 4.6 5 -0.05 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 d004 -40 q c 25 q c 85 q c 105 q c bias voltage (v) v bias quiescent current ( p a) 2.5 3 3.5 4 4.5 5 5.5 10 20 30 40 50 60 d001 -40 q c 25 q c 85 q c 105 q c bias voltage (v) v bias quiescent current ( p a) 2.5 3 3.5 4 4.5 5 5.5 10 20 30 40 50 60 d002 -40 q c 25 q c 85 q c 105 q c ambient temperature ( q c) on-resistance (m : ) -40 -20 0 20 40 60 80 100 10 15 20 25 d005 v in = 0.6 v v in = 0.8 v v in = 1.05 v v in = 1.2 v v in = 1.8 v v in = 2.5 v ambient temperature ( q c) on-resistance (m : ) -40 -20 0 20 40 60 80 100 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 d005d006 v in = 0.6 v v in = 1.05 v v in = 1.8 v v in = 2.5 v v in = 3.3 v v in = 5 v
9 tps22976 www.ti.com slvsde7 ? november 2016 product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated typical dc characteristics (continued) v bias = 2.5 v i out = ? 200 ma v on = 5 v figure 7. on-resistance vs input voltage single channel - across ambient temperatures v bias = 5 v i out = ? 200 ma v on = 5 v figure 8. on-resistance vs input voltage single channel - across ambient temperatures t a = 25 c note: v bias = 5 v and 5.7 v curves have similar values, therefore only one line is visible. figure 9. on-resistance vs input voltage single channel - across v bias v in = 2.5 v v on = 0 v figure 10. pulldown resistance vs bias voltage single channel v in = v bias figure 11. high-level input voltage vs bias voltage v in = v bias figure 12. low-level input voltage vs bias voltage bias voltage (v) high-level input voltage, on (v) 2.5 3 3.5 4 4.5 5 5.5 0.7 0.75 0.8 0.85 0.9 0.95 1 d013 -40 q c 25 q c 85 q c 105 q c bias voltage (v) low level input voltage, on (v) 2.5 3 3.5 4 4.5 5 5.5 0.6 0.65 0.7 0.75 0.8 0.85 0.9 d014 -40 q c 25 q c 85 q c 105 q c input voltage (v) on-resistance (m : ) 0.6 1.1 1.6 2.1 2.6 3.1 3.6 4.1 4.6 5.1 5.6 12 13 14 15 16 17 18 d011 v bias = 2.5 v v bias = 3.3 v v bias = 5 v v bias = 5.7 v bias voltage (v) pulldown resistance ( : ) 2.5 3 3.5 4 4.5 5 5.5 215 220 225 230 235 240 245 250 255 260 d012 -40 q c 25 q c 85 q c 105 q c input voltage (v) on-resistance (m : ) 0.6 1 1.4 1.8 2.2 2.5 10 15 20 25 d007 -40 q c 25 q c 85 q c 105 q c input voltage (v) on-resistance (m : ) 0.6 1.1 1.6 2.1 2.6 3.1 3.6 4.1 4.6 5 10 12 14 16 18 20 22 24 26 d008 -40 q c 25 q c 85 q c 105 q c
10 tps22976 slvsde7 ? november 2016 www.ti.com product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated typical dc characteristics (continued) v in = v bias figure 13. voltage input hysteresis vs bias voltage bias voltage (v) hysteresis voltage (mv) 2.5 3 3.5 4 4.5 5 5.5 0 20 40 60 80 100 120 140 d015 -40 q c 25 q c 85 q c 105 q c
11 tps22976 www.ti.com slvsde7 ? november 2016 product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated 7.9 typical ac characteristics t a = 25 c, c t = 1000 pf, c in = 1 f, c l = 0.1 f, r l = 10 ? , v on = 5 v v bias = 2.5 v figure 14. delay time vs input voltage v bias = 5 v figure 15. delay time vs input voltage v bias = 2.5 v figure 16. fall time vs input voltage v bias = 5 v figure 17. fall time vs input voltage v bias = 2.5 v figure 18. turnoff time vs input voltage v bias = 5 v figure 19. turnoff time vs input voltage input voltage (v) turnoff time ( p s) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 1 2 3 4 5 d020 -40 q c 25 q c 85 q c 105 q c input voltage (v) turnoff time ( p s) 0.6 1.1 1.6 2.1 2.6 3.1 3.6 4.1 4.6 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 d021 -40 q c 25 q c 85 q c 105 q c input voltage (v) fall time ( p s) 0.6 1 1.4 1.8 2.2 2.5 0 0.5 1 1.5 2 2.5 3 d018 -40 q c 25 q c 85 q c 105 q c input voltage (v) fall time ( p s) 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 d019 -40 q c 25 q c 85 q c 105 q c input voltage (v) delay time ( p s) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 200 400 600 800 1000 1200 1400 1600 d016 -40 q c 25 q c 85 q c 105 q c input voltage (v) delay time ( p s) 0.6 1.1 1.6 2.1 2.6 3.1 3.6 4.1 4.6 5 0 100 200 300 400 500 600 700 800 d017 -40 q c 25 q c 85 q c 105 q c
12 tps22976 slvsde7 ? november 2016 www.ti.com product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated typical ac characteristics (continued) t a = 25 c, c t = 1000 pf, c in = 1 f, c l = 0.1 f, r l = 10 ? , v on = 5 v v bias = 2.5 v figure 20. turnon time vs input voltage v bias = 5 v figure 21. turnon time vs input voltage v bias = 2.5 v figure 22. rise time vs input voltage v bias = 5 v figure 23. rise time vs input voltage v in = 0.6 v v bias = 2.5 v figure 24. turnon response time v in = 0.6 v v bias = 5 v figure 25. turnon response time input voltage (v) rise time ( p s) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 500 1000 1500 2000 2500 3000 d024 -40 q c 25 q c 85 q c 105 q c input voltage (v) rise time ( p s) 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 4.2 4.6 5 0 500 1000 1500 2000 2500 d025 -40 q c 25 q c 85 q c 105 q c input voltage (v) turnon time ( p s) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 500 1000 1500 2000 2500 3000 d022 -40 q c 25 q c 85 q c 105 q c input voltage (v) turnon time ( p s) 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 4.2 4.6 5 0 200 400 600 800 1000 1200 1400 1600 1800 d023 -40 q c 25 q c 85 q c 105 q c
13 tps22976 www.ti.com slvsde7 ? november 2016 product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated typical ac characteristics (continued) t a = 25 c, c t = 1000 pf, c in = 1 f, c l = 0.1 f, r l = 10 ? , v on = 5 v v in = 2.5 v v bias = 2.5 v figure 26. turnon response time v in = 5 v v bias = 5 v figure 27. turnon response time v in = 0.6 v v bias = 2.5 v figure 28. turnoff response time v in = 0.6 v v bias = 5 v figure 29. turnoff response time v in = 2.5 v v bias = 2.5 v figure 30. turnoff response time v in = 5 v v bias = 5 v figure 31. turnoff response time
14 tps22976 slvsde7 ? november 2016 www.ti.com product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated 8 parameter measurement information figure 32. test circuit figure 33. t on and t off waveforms + _ off on tps22976 vin vout c l gnd gnd vbias gnd c in = 1f single channel shown for clarity on ct1, 2 + _ r l t r t f t on t off 90% 90% 10% 10% v on v out v out 50% 50% 50% 50% t d 10%
15 tps22976 www.ti.com slvsde7 ? november 2016 product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated 9 detailed description 9.1 overview the tps22976 is a 5.7-v, dual-channel, 14-m ? (typical) r on load switch in a 14-pin wson package. each channel can support a maximum continuous current of 6 a and is controlled by an on and off gpio-compatible input. to reduce the voltage drop in high current rails, the device implements n-channel mosfets. note that the on pins must be connected and cannot be left floating. the device has a configurable slew rate for applications that require specific rise-time, which controls the inrush current. by controlling the inrush current, power supply sag can be reduced during turnon. furthermore, the slew rate is proportional to the capacitor on the ct pin. see the adjustable rise time section to determine the correct ct value for a desired rise time. the internal circuitry is powered by the v bias pin, which supports voltages from 2.5 v to 5.7 v. this circuitry includes the charge pump, qod (optional), and control logic. when a voltage is applied to v bias , and the on 1,2 pins transition to a low state, the qod functionality is activated. this connects v out1 and v out2 to ground through the on-chip resistor. the typical pulldown resistance (r pd ) is 230 ? . during the off state, the device prevents downstream circuits from pulling high standby current from the supply. the integrated control logic, driver, power supply, and output discharge fet eliminates the need for any external components, reducing solution size and bill of materials (bom) count.
16 tps22976 slvsde7 ? november 2016 www.ti.com product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated 9.2 functional block diagram figure 34. tps22976 functional block diagram 9.3 feature description 9.3.1 on and off control the on pins control the state of the switch. asserting on high enables the switch. on is active high with a low threshold, making it capable of interfacing with low-voltage signals. the on pin is compatible with standard gpio logic threshold. it can be used with any microcontroller with 1.2 v or higher gpio voltage. this pin cannot be left floating and must be tied either high or low for proper functionality. control logic vin1 on1 vout1 gnd charge pump control logic vin2 on2 vout2 ct1 ct2 vbias not present in tps22976n not present in tps22976n copyright ? 2016, texas instruments incorporated
17 tps22976 www.ti.com slvsde7 ? november 2016 product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated feature description (continued) 9.3.2 input capacitor (optional) to limit the voltage drop on the input supply caused by transient inrush currents when the switch turns on into a discharged load capacitor, a capacitor needs to be placed between vin and gnd. a 1- f ceramic capacitor, c in , placed close to the pins is usually sufficient. higher values of c in can be used to further reduce the voltage drop during high-current application. when switching heavy loads, it is recommended to have an input capacitor about 10 times higher than the output capacitor to avoid excessive voltage drop. 9.3.3 output capacitor (optional) due to the integrated body diode in the nmos switch, a c in greater than c l is highly recommended. a c l greater than c in can cause v out to exceed v in when the system supply is removed. this could result in current flow through the body diode from vout to vin. a c in to c l ratio of 10 to 1 is recommended for minimizing v in dip caused by inrush currents during startup, however a 10 to 1 ratio for capacitance is not required for proper functionality of the device. a ratio smaller than 10 to 1 (such as 1 to 1) could cause slightly more v in dip upon turnon due to inrush currents. this can be mitigated by increasing the capacitance on the ct pin for a longer rise time. (see the adjustable rise time section). 9.3.4 quick output discharge (qod) (not present in tps22976n) the tps22976 includes a qod feature. when the switch is disabled, an internal discharge resistance is connected between vout and gnd to remove the remaining charge from the output. this resistance prevents the output from floating while the switch is disabled. for best results, it is recommended that the device gets disabled before v bias falls below the minimum recommended voltage. 9.3.5 thermal shutdown thermal shutdown protects the part from internally or externally generated excessive temperatures. when the device temperature exceeds t sd (typical 160 c), the switch is turned off. the switch automatically turns on again if the temperature of the die drops 20 degrees below the t sd threshold. 9.4 device functional modes table 1 lists the tps22976 functions. table 1. tps22976 functions table on vin to vout vout l off gnd h on vin table 2 lists the tps22976n functions. table 2. tps22976n functions table on vin to vout vout l off floating h on vin
18 tps22976 slvsde7 ? november 2016 www.ti.com product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated 10 application and implementation note information in the following applications sections is not part of the ti component specification, and ti does not warrant its accuracy or completeness. ti ? s customers are responsible for determining suitability of components for their purposes. customers should validate and test their design implementation to confirm system functionality. 10.1 application information this section highlights some of the design considerations for implementing the device in various applications. a pspice model for this device is also available on the product page for additional information. 10.1.1 parallel configuration to increase current capabilities and to lower r on , both channels can be placed in parallel as seen in figure 35 . with this configuration, the ct1 and ct2 pins can be tied together to use one capacitor, ct. see the tps22966 dual-channel load switch in parallel configuration application report and parallel load switches for higher output current & reduced on-resistance design guide for more information. figure 35. parallel configuration 10.1.2 standby power reduction battery powered end equipments often have strict power budgets, in which there is a need to reduce current consumption. the tps22976 significantly reduces system current consumption by disabling the supply voltage to subsystems in standby states. alternatively, the tps22976 reduces the leakage current overhead of the modules in standby mode as achieved in figure 36 . note that standby power reduction can be achieved on either channel, as well as dual-channel operation. tps22976 power source c gpio system module gnd vin1 on1 vin2 on2 vout1 ct1 vout2 ct2 vbias copyright ? 2016, texas instruments incorporated
19 tps22976 www.ti.com slvsde7 ? november 2016 product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated application information (continued) figure 36. standby power reduction 10.1.3 power supply sequencing without gpio input sequential startup of several subsystems is often burdensome and adds complexity for several end equipments. the tps22976 provides a power sequencing solution that reduces the overall system complexity, as seen in figure 37 . figure 37. power sequencing without a gpio input tps22976 power source c gpio module 1 gnd vin1 on1 vin2 on2 vout1 ct1 vout2 ct2 vbias power source module 2 copyright ? 2016, texas instruments incorporated tps22976 always on module power source c gpio standby module gnd vbias vin1 on1 vout1 ct1 single channel shown for clarity. copyright ? 2016, texas instruments incorporated
20 tps22976 slvsde7 ? november 2016 www.ti.com product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated application information (continued) 10.1.4 reverse current blocking reverse current blocking is often desired in specific applications, as it prevents current from flowing from the output to the input of the load switch when the device is disabled. with the configuration illustrated in figure 38 , the tps22976 can be converted into a single-channel switch with reverse current blocking. vin1 or vin2 can be used as the input and vin2 or vin1 as the output. figure 38. reverse current blocking 10.2 typical application this application demonstrates how the tps22976 can be used to limit the inrush current when powering on downstream modules. figure 39. typical application circuit dual power supply or dual dc-dc converter off on tps22976 gnd on1 ct1 off on on2 gnd ct2 vbias c in c l r l vin2 vin1 vout1 vout2 c in gnd c l r l copyright ? 2016, texas instruments incorporated tps22976 power source c gpio gnd vin1 on1 vin2 on2 vout1 ct1 vout2 ct2 vbias system module copyright ? 2016, texas instruments incorporated
21 tps22976 www.ti.com slvsde7 ? november 2016 product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated typical application (continued) 10.2.1 design requirements table 3 shows the tps22976 design parameters. table 3. design parameters design parameter value input voltage 3.3 v bias voltage 5 v load capacitance (c l ) 22 f maximum acceptable inrush current 400 ma 10.2.2 detailed design procedure 10.2.2.1 inrush current when the switch is enabled, the output capacitors must be charged up from 0 v to the set value (3.3 v in this example). this charge arrives in the form of inrush current. inrush current can be calculated using equation 1 . inrush current = c dv/dt where ? c is the output capacitance ? dv is the output voltage ? dt is the rise time (1) the tps22976 offers adjustable rise time for vout. this feature allows the user to control the inrush current during turnon. the appropriate rise time can be calculated using table 3 and the inrush current equation. see equation 2 and equation 3 . 400 ma = 22 f 3.3 v/dt (2) dt = 181.5 s (3) to ensure an inrush current of less than 400 ma, choose a ct value that yields a rise time of more than 181.5 s. see the oscilloscope captures in the application curves section for an example of how the ct capacitor can be used to reduce inrush current.
22 tps22976 slvsde7 ? november 2016 www.ti.com product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated (1) typical values at 25 c, v bias = 5 v, 25 v x7r 10% ceramic cap 10.2.2.2 adjustable rise time a capacitor to gnd on the ct pins sets the slew rate for each channel. to ensure desired performance, a capacitor with a minimum voltage rating of 25 v must be used on either ct pins. an approximate formula for the relationship between ct and slew rate is shown in equation 4 . equation 4 accounts for 10% to 90% measurement on v out and does not apply for ct = 0 pf. use table 4 to determine rise times for when ct = 0 pf): sr = 0.42 ct + 66 where ? sr is the slew rate (in s/v) ? ct is the capacitance value on the ct pin (in pf) ? the units for the constant 66 is in s/v. (4) rise time can be calculated by multiplying the input voltage by the slew rate. table 4 shows rise time values measured on a typical device. rise times shown below are only valid for the power-up sequence where v in and v bias are already in steady state condition, and the on pin is asserted high. table 4. rise time values ct (pf) rise time ( s) 10% - 90%, c l = 0.1 f, c in = 1 f, r l = 10 (1) 5 v 3.3 v 1.8 v 1.5 v 1.2 v 1.05 v 0.6 v 0 149 112 77 70 60 56 42 220 548 388 236 206 173 154 103 470 968 673 401 342 289 256 169 1000 1768 1220 711 608 505 445 286 2200 3916 2678 1554 1332 1097 949 627 4700 8040 5477 3179 2691 2240 1964 1249 10000 16520 11150 6410 5401 4430 3933 2526 10.2.3 application curves v bias = 5 v ; v in = 3.3 v ; c l = 22 f figure 40. inrush current with ct = 0 pf figure 41. inrush current with ct = 220 pf
23 tps22976 www.ti.com slvsde7 ? november 2016 product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated 11 power supply recommendations the device is designed to operate from a v bias range of 2.5 v to 5.7 v and a v in range of 0.6 v to v bias . 12 layout 12.1 layout guidelines for best performance, all traces must be as short as possible. to be most effective, the input and output capacitors must be placed close to the device to minimize the effects that parasitic trace inductances may have on normal operation. using wide traces for v in , v out , and gnd helps minimize the parasitic electrical effects along with minimizing the case to ambient thermal impedance. 12.2 layout example notice the thermal vias located under the exposed thermal pad of the device. this allows for thermal diffusion away from the device. figure 42. pcb layout example 12.3 power dissipation the maximum ic junction temperature must be restricted to 125 c under normal operating conditions. to calculate the maximum allowable power dissipation, p d(max) for a given output current and ambient temperature, use equation 5 . where ? p d(max) is the maximum allowable power dissipation ? t j(max) is the maximum allowable junction temperature (125 c for the tps22976) ? t a is the ambient temperature of the device ? ja is the junction to air thermal impedance. see the thermal information section. this parameter is highly dependent upon board layout. (5) j(max) a d(max) ja t t p - = ct1 capacitor ct2 capacitor vin1 capacitor vout1 capacitor vin2 capacitor vout2 capacitor thermal relief vias
24 tps22976 slvsde7 ? november 2016 www.ti.com product folder links: tps22976 submit documentation feedback copyright ? 2016, texas instruments incorporated 13 device and documentation support 13.1 documentation support 13.1.1 related documentation for related documentation see the following: tps22976 evaluation module user ' s guide 13.2 receiving notification of documentation updates to receive notification of documentation updates, navigate to the device product folder on ti.com . in the upper right corner, click on alert me to register and receive a weekly digest of any product information that has changed. for change details, review the revision history included in any revised document. 13.3 community resources the following links connect to ti community resources. linked contents are provided "as is" by the respective contributors. they do not constitute ti specifications and do not necessarily reflect ti's views; see ti's terms of use . ti e2e ? online community ti's engineer-to-engineer (e2e) community. created to foster collaboration among engineers. at e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. design support ti's design support quickly find helpful e2e forums along with design support tools and contact information for technical support. 13.4 trademarks e2e is a trademark of texas instruments. ultrabook is a trademark of intel. all other trademarks are the property of their respective owners. 13.5 electrostatic discharge caution these devices have limited built-in esd protection. the leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the mos gates. 13.6 glossary slyz022 ? ti glossary . this glossary lists and explains terms, acronyms, and definitions. 14 mechanical, packaging, and orderable information the following pages include mechanical, packaging, and orderable information. this information is the most- current data available for the designated devices. this data is subject to change without notice and without revision of this document. for browser-based versions of this data sheet, see the left-hand navigation pane.
package option addendum www.ti.com 2-dec-2016 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish (6) msl peak temp (3) op temp (c) device marking (4/5) samples tps22976dpur active wson dpu 14 3000 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 105 22976 tps22976dput active wson dpu 14 250 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 105 22976 TPS22976NDPUR active wson dpu 14 3000 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 105 22976n tps22976ndput active wson dpu 14 250 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 105 22976n (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. - the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. (4) there may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) multiple device markings will be inside parentheses. only one device marking contained in parentheses and separated by a "~" will appear on a device. if a line is indented then it is a continuation of the previous line and the two combined represent the entire device marking for that device. (6) lead/ball finish - orderable devices may have multiple material finish options. finish options are separated by a vertical ruled line. lead/ball finish values may wrap to two lines if the finish value exceeds the maximum column width.
package option addendum www.ti.com 2-dec-2016 addendum-page 2 important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.
tape and reel information *all dimensions are nominal device package type package drawing pins spq reel diameter (mm) reel width w1 (mm) a0 (mm) b0 (mm) k0 (mm) p1 (mm) w (mm) pin1 quadrant tps22976dpur wson dpu 14 3000 180.0 8.4 2.25 3.25 1.05 4.0 8.0 q1 tps22976dput wson dpu 14 250 180.0 8.4 2.25 3.25 1.05 4.0 8.0 q1 TPS22976NDPUR wson dpu 14 3000 180.0 8.4 2.25 3.25 1.05 4.0 8.0 q1 tps22976ndput wson dpu 14 250 180.0 8.4 2.25 3.25 1.05 4.0 8.0 q1 package materials information www.ti.com 3-dec-2016 pack materials-page 1
*all dimensions are nominal device package type package drawing pins spq length (mm) width (mm) height (mm) tps22976dpur wson dpu 14 3000 210.0 185.0 35.0 tps22976dput wson dpu 14 250 210.0 185.0 35.0 TPS22976NDPUR wson dpu 14 3000 210.0 185.0 35.0 tps22976ndput wson dpu 14 250 210.0 185.0 35.0 package materials information www.ti.com 3-dec-2016 pack materials-page 2

important notice texas instruments incorporated and its subsidiaries (ti) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per jesd46, latest issue, and to discontinue any product or service per jesd48, latest issue. buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. all semiconductor products (also referred to herein as ? components ? ) are sold subject to ti ? s terms and conditions of sale supplied at the time of order acknowledgment. ti warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in ti ? s terms and conditions of sale of semiconductor products. testing and other quality control techniques are used to the extent ti deems necessary to support this warranty. except where mandated by applicable law, testing of all parameters of each component is not necessarily performed. ti assumes no liability for applications assistance or the design of buyers ? products. buyers are responsible for their products and applications using ti components. to minimize the risks associated with buyers ? products and applications, buyers should provide adequate design and operating safeguards. ti does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, machine, or process in which ti components or services are used. information published by ti regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement thereof. use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from ti under the patents or other intellectual property of ti. reproduction of significant portions of ti information in ti data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. ti is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ti components or services with statements different from or beyond the parameters stated by ti for that component or service voids all express and any implied warranties for the associated ti component or service and is an unfair and deceptive business practice. ti is not responsible or liable for any such statements. buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements concerning its products, and any use of ti components in its applications, notwithstanding any applications-related information or support that may be provided by ti. buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause harm and take appropriate remedial actions. buyer will fully indemnify ti and its representatives against any damages arising out of the use of any ti components in safety-critical applications. in some cases, ti components may be promoted specifically to facilitate safety-related applications. with such components, ti ? s goal is to help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and requirements. nonetheless, such components are subject to these terms. no ti components are authorized for use in fda class iii (or similar life-critical medical equipment) unless authorized officers of the parties have executed a special agreement specifically governing such use. only those ti components which ti has specifically designated as military grade or ? enhanced plastic ? are designed and intended for use in military/aerospace applications or environments. buyer acknowledges and agrees that any military or aerospace use of ti components which have not been so designated is solely at the buyer ' s risk, and that buyer is solely responsible for compliance with all legal and regulatory requirements in connection with such use. ti has specifically designated certain components as meeting iso/ts16949 requirements, mainly for automotive use. in any case of use of non-designated products, ti will not be responsible for any failure to meet iso/ts16949. products applications audio www.ti.com/audio automotive and transportation www.ti.com/automotive amplifiers amplifier.ti.com communications and telecom www.ti.com/communications data converters dataconverter.ti.com computers and peripherals www.ti.com/computers dlp ? products www.dlp.com consumer electronics www.ti.com/consumer-apps dsp dsp.ti.com energy and lighting www.ti.com/energy clocks and timers www.ti.com/clocks industrial www.ti.com/industrial interface interface.ti.com medical www.ti.com/medical logic logic.ti.com security www.ti.com/security power mgmt power.ti.com space, avionics and defense www.ti.com/space-avionics-defense microcontrollers microcontroller.ti.com video and imaging www.ti.com/video rfid www.ti-rfid.com omap applications processors www.ti.com/omap ti e2e community e2e.ti.com wireless connectivity www.ti.com/wirelessconnectivity mailing address: texas instruments, post office box 655303, dallas, texas 75265 copyright ? 2016, texas instruments incorporated

▲Up To Search▲

Price & Availability of TPS22976NDPUR

	To Download TPS22976NDPUR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .